ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Diamond is the hardest material and has high chemical resistant which is one form of carbon. In thepresent work a study was carried out on polycrystalline diamond coated Si3N4 substrate. Thediamond was deposited by Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD)under varying deposition parameters namely CH4 diluted in H2, microwave power and chamberpressure. SEM and AFM are used to investigate the surface morphology and surface roughness.Nucleation phenomena and crystal width were also studied using AFM. Based on SEMinvestigation it was found that the chamber pressure and %CH4 have more significant effects onnucleation and facet of polycrystalline diamond, In addition microwave power has an effect on thediamond facet that changed from cubic to cauliflower structure. Surface roughness results showthat increasing the %CH4 has decreased surface roughness 334.83 to 269.99 nm at 1 to 3% CH4,respectively. Increasing microwave power leads to increase in diamond nucleation and coalescencewhich lead to less surface roughness. Increasing gas pressure may eliminate Si contaminationhowever it reduces diamond nucleation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.136.153.pdf